VBM2658 Datasheet and Replacement
Type Designator: VBM2658
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
Package: TO220AB
VBM2658 substitution
VBM2658 Datasheet (PDF)
vbm2658.pdf

VBM2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0600 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.0850 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSTO-220AB Power Swi
vbm2610n.pdf

VBM2610Nwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
vbm2625.pdf

VBM2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
Datasheet: VBM1808 , VBM18R15S , VBMB18R15S , VBP18R15S , VBM2102M , VBM2309 , VBM2610N , VBM2625 , 10N65 , VBMB1101M , VBMB1104N , VBMB1203M , VBMB1208N , VBMB1303 , VBMB1311 , VBMB155R18 , VBMB15R13 .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - VBM2658 MOSFET datasheet
VBM2658 cross reference
VBM2658 equivalent finder
VBM2658 lookup
VBM2658 substitution
VBM2658 replacement
History: RFP5P12 | IRF820ASPBF | IRFY430CM



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