All MOSFET. VBMB165R18 Datasheet

 

VBMB165R18 Datasheet and Replacement


   Type Designator: VBMB165R18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36(typ) Ohm
   Package: TO220FP
 

 VBMB165R18 substitution

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VBMB165R18 Datasheet (PDF)

 ..1. Size:1167K  cn vbsemi
vbmb165r18.pdf pdf_icon

VBMB165R18

VBMB165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche e

 5.1. Size:1406K  cn vbsemi
vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBMB165R18

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

 5.2. Size:1339K  cn vbsemi
vbm165r12 vbmb165r12 vbl165r12.pdf pdf_icon

VBMB165R18

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

 5.3. Size:1284K  cn vbsemi
vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf pdf_icon

VBMB165R18

VBM165R10 / VBMB165R10VBE165R10 / VBFB165R10www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy

Datasheet: VBMB1311 , VBMB155R18 , VBMB15R13 , VBMB1606 , VBMB1615 , VBMB1638 , VBMB165R02 , VBMB165R04 , AON6380 , VBMB165R20 , VBMB16R08 , VBMB17R07 , VBMB185R05 , VBMB2102M , VBMB2610N , VBMB2658 , VBNC1303 .

History: HAT2206C | SVSP11N60SD2TR | CS4N90F | 4N80L-T2Q-T | NCE60N390D | EKI07174 | STP3N62K3

Keywords - VBMB165R18 MOSFET datasheet

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