All MOSFET. VBQA2309 Datasheet

 

VBQA2309 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQA2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 102 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: DFN5X6

 VBQA2309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQA2309 Datasheet (PDF)

 ..1. Size:266K  cn vbsemi
 vbqa2309.pdf

VBQA2309 VBQA2309

VBQA2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Pe

 7.1. Size:485K  cn vbsemi
 vbqa2305.pdf

VBQA2309 VBQA2309

VBQA2305www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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