All MOSFET. VBQF1310 Datasheet

 

VBQF1310 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQF1310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 21.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 236 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
   Package: DFN3X3EP

 VBQF1310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQF1310 Datasheet (PDF)

 ..1. Size:1422K  cn vbsemi
 vbqf1310.pdf

VBQF1310 VBQF1310

VBQF1310www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.010 at V = 10 V 30GS 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC0.018 at V = 4.5 V 25GS APPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View

 8.1. Size:983K  cn vbsemi
 vbqf1303.pdf

VBQF1310 VBQF1310

VBQF1303www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control In

 8.2. Size:1082K  cn vbsemi
 vbqf1306.pdf

VBQF1310 VBQF1310

VBQF1306www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0045 at VGS = 10 V 40 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC0.0060 at VGS = 4.5 V 33.3APPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View

 9.1. Size:493K  cn vbsemi
 vbqf1206.pdf

VBQF1310 VBQF1310

VBQF1206www.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.0055 at VGS = 4.5V 5820 9.4 nC0.0057 at VGS = 2.5 V 45APPLICATIONS High power density DC/DC Synchronous rectification Embedded DC/DCDFN 3x3 EPD Bottom View Top View Top View1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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