VBZA4606 Specs and Replacement

Type Designator: VBZA4606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 755 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SO8

VBZA4606 substitution

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VBZA4606 datasheet

 ..1. Size:2360K  cn vbsemi
vbza4606.pdf pdf_icon

VBZA4606

VBZA4606 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.015 at VGS = 10 V 9 100 % Rg and UIS Tested N-Channel 30 13 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 8 APPLICATIONS 0.021 at VGS = - 10 V - 8 ... See More ⇒

 8.1. Size:2245K  cn vbsemi
vbza4618.pdf pdf_icon

VBZA4606

VBZA4618 www.VBsemi.com N- and P-Channel 40V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition Typ. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.015 at VGS = 10 V 9.0 100 % Rg and UIS Tested N-Channel 40 13 Compliant to RoHS Directive 2002/95/EC 0.018 at VGS = 4.5 V 7.6 APPLICATIONS 0.017 at VGS = -... See More ⇒

 8.2. Size:2621K  cn vbsemi
vbza4611.pdf pdf_icon

VBZA4606

VBZA4611 www.VBsemi.com N- and P-Channe 60V (D-S) MOSFET - FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition Typ. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 9.0 100 % Rg and UIS Tested N-Channel 60 13 Compliant to RoHS Directive 2002/95/EC 0.016 at VGS = 4.5 V 8.0 APPLICATIONS 0.041 at VGS... See More ⇒

 9.1. Size:1231K  cn vbsemi
vbza4936.pdf pdf_icon

VBZA4606

VBZA4936 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.015 at VGS = 10 V TrenchFET Power MOSFET 10 30 15 nC 100 % UIS Tested 0.019 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

Detailed specifications: VBZA4407, VBZA4409, VBZA4410, VBZA4412, VBZA4420, VBZA4425, VBZA4430, VBZA4435, IRFP250N, VBZA4611, VBZA4618, VBZA4800, VBZA4805, VBZA4850, VBZA4936, VBZA4946, VBZA4953

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