VBZA9410 Specs and Replacement
Type Designator: VBZA9410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm
Package: SO8
VBZA9410 substitution
- MOSFET ⓘ Cross-Reference Search
VBZA9410 datasheet
vbza9410.pdf
VBZA9410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒
vbza9435.pdf
VBZA9435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.026at VGS = - 10 V - 6 100 % Rg Tested RoHS - 30 29 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V - 5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 ... See More ⇒
vbza9945.pdf
VBZA9945 www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.027 RDS(on) ( ) at VGS = 4.5 V 0.041 ID (A) per leg 8 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel MO... See More ⇒
Detailed specifications: VBZA4953, VBZA4953A, VBZA5670, VBZA6679, VBZA7240, VBZA7470, VBZA8858, VBZA9358, K4145, VBZA9435, VBZA9926, VBZA9926A, VBZA9936, VBZA9945, VBZB8205A, VBZC8205A, VBZC8205B
Keywords - VBZA9410 MOSFET specs
VBZA9410 cross reference
VBZA9410 equivalent finder
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VBZA9410 substitution
VBZA9410 replacement
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