VBZC8205A Datasheet and Replacement
Type Designator: VBZC8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 330 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
Package: TSOP6
VBZC8205A substitution
VBZC8205A Datasheet (PDF)
vbzc8205a.pdf
VBZC8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.025 at VGS = 4.5 V Available4.520RoHS*0.032 at VGS = 2.5 V 3.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA
vbzc8205b.pdf
VBZC8205Bwww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.020 at VGS = 4.5 V Available4.820RoHS*0.032 at VGS = 2.5 V 3.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA
vbzc8810.pdf
VBZC8810www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.018 at VGS = 4.5 V Available5.020RoHS*0.030 at VGS = 2.5 V 3.6COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RAT
Datasheet: VBZA9358 , VBZA9410 , VBZA9435 , VBZA9926 , VBZA9926A , VBZA9936 , VBZA9945 , VBZB8205A , AON6380 , VBZC8205B , VBZC8810 , VBZE04N03 , VBZE06N02 , VBZE06N03 , VBZE100N02 , VBZE100N03 , VBZE100P03 .
Keywords - VBZC8205A MOSFET datasheet
VBZC8205A cross reference
VBZC8205A equivalent finder
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VBZC8205A substitution
VBZC8205A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: CEU740A | PN4119
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