VBZE15N03 Specs and Replacement

Type Designator: VBZE15N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 35 max nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 typ Ohm

Package: TO252

VBZE15N03 substitution

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VBZE15N03 datasheet

 ..1. Size:2197K  cn vbsemi
 vbze15n03.pdf pdf_icon

VBZE15N03

VBZE15N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013at VGS = 10 V 43 30 28nC 0.020 at VGS = 4.5 V 36 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL... See More ⇒

 7.1. Size:1383K  cn vbsemi
 vbze15n10.pdf pdf_icon

VBZE15N03

VBZE15N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 at VGS = 10 V 0.097 16 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

 9.1. Size:1171K  cn vbsemi
 vbze16n05.pdf pdf_icon

VBZE15N03

VBZE16N05 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.026 at VGS = 10 V 41 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted ... See More ⇒

 9.2. Size:1730K  cn vbsemi
 vbze100n02.pdf pdf_icon

VBZE15N03

VBZE100N02 www.VBsemi.com N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0025 at VGS = 4.5 V 160 20 85 nC 0.006at VGS = 2.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ... See More ⇒

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Detailed specifications: VBZE100N02, VBZE100N03, VBZE100P03, VBZE10N20, VBZE12N03, VBZE12N06, VBZE12N10, VBZE12P10, 10N65, VBZE15N10, VBZE16N05, VBZE20N03, VBZE20N06, VBZE20N10, VBZE20N20, VBZE20P03, VBZE20P06

Keywords - VBZE15N03 MOSFET specs

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