VBZE20P06 Specs and Replacement

Type Designator: VBZE20P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 typ Ohm

Package: TO252

VBZE20P06 substitution

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VBZE20P06 datasheet

 ..1. Size:829K  cn vbsemi
 vbze20p06.pdf pdf_icon

VBZE20P06

VBZE20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 40 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy... See More ⇒

 6.1. Size:1413K  cn vbsemi
 vbze20p03.pdf pdf_icon

VBZE20P06

VBZE20P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 43 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.040 at VGS = - 4.5 V - 30 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-... See More ⇒

 8.1. Size:1435K  cn vbsemi
 vbze20n20.pdf pdf_icon

VBZE20P06

VBZE20N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒

 8.2. Size:1418K  cn vbsemi
 vbze20n10.pdf pdf_icon

VBZE20P06

VBZE20N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (... See More ⇒

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Detailed specifications: VBZE15N03, VBZE15N10, VBZE16N05, VBZE20N03, VBZE20N06, VBZE20N10, VBZE20N20, VBZE20P03, IRF2807, VBZE2810, VBZE2N60, VBZE30N02, VBZE30N03, VBZE30N06, VBZE30N10, VBZE40N03, VBZE40N06

Keywords - VBZE20P06 MOSFET specs

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