All MOSFET. VBZE40N06 Datasheet

 

VBZE40N06 Datasheet and Replacement


   Type Designator: VBZE40N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
 

 VBZE40N06 substitution

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VBZE40N06 Datasheet (PDF)

 ..1. Size:1582K  cn vbsemi
vbze40n06.pdf pdf_icon

VBZE40N06

VBZE40N06www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.035 at VGS = 10 V 30RoHS*600.051 at VGS = 4.5 V 23 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 6.1. Size:1660K  cn vbsemi
vbze40n03.pdf pdf_icon

VBZE40N06

VBZE40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.008at VGS = 10 V 7530 30 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

 7.1. Size:2331K  cn vbsemi
vbze40n10.pdf pdf_icon

VBZE40N06

VBZE40N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature1000.035at VGS = 10 V 30RoHS* Low Thermal Resistance PackageCOMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamet

 8.1. Size:1080K  cn vbsemi
vbze40p06.pdf pdf_icon

VBZE40N06

VBZE40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 60 160.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Co

Datasheet: VBZE20P06 , VBZE2810 , VBZE2N60 , VBZE30N02 , VBZE30N03 , VBZE30N06 , VBZE30N10 , VBZE40N03 , IRF730 , VBZE40N10 , VBZE40P03 , VBZE40P06 , VBZE40P10 , VBZE4204 , VBZE4286 , VBZE45N03 , VBZE50N03 .

History: NVMFS5C670NL | NVMFS5C410N | DHB16N06 | AP60SL650AFI | BLP04N10-P | QM3024D | SM140R50CT1TL

Keywords - VBZE40N06 MOSFET datasheet

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