FDC606P PDF and Equivalents Search

 

FDC606P Specs and Replacement

Type Designator: FDC606P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 679 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SSOT6

FDC606P substitution

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FDC606P datasheet

 ..1. Size:154K  fairchild semi
fdc606p.pdf pdf_icon

FDC606P

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V... See More ⇒

 ..2. Size:270K  onsemi
fdc606p.pdf pdf_icon

FDC606P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:211K  fairchild semi
fdc6020c.pdf pdf_icon

FDC606P

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS... See More ⇒

 9.2. Size:144K  fairchild semi
fdc608pz.pdf pdf_icon

FDC606P

June 2006 tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye... See More ⇒

Detailed specifications: STU307S , FDC3612 , STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , IRFP460 , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , FDC6320C , STU303S , FDC6321C .

Keywords - FDC606P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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