FDC606P
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC606P
Marking Code: .606'
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 679
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
SSOT6
FDC606P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC606P
Datasheet (PDF)
..1. Size:154K fairchild semi
fdc606p.pdf 
December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchilds low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V
..2. Size:270K onsemi
fdc606p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:211K fairchild semi
fdc6020c.pdf
November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS
9.2. Size:144K fairchild semi
fdc608pz.pdf
June 2006tmFDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye
9.3. Size:62K fairchild semi
fdc602p f095.pdf
April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of
9.4. Size:65K fairchild semi
fdc602p.pdf
April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of
9.5. Size:174K fairchild semi
fdc6000nz.pdf
June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductors advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran
9.6. Size:90K fairchild semi
fdc604p.pdf
January 2001FDC604PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 VFairchilds low voltage PowerTrench process. It hasRDS(ON) = 43 m @ VGS = 2.5 Vbeen optimized for battery power managementRDS(ON) = 60 m @ VGS = 1.8 Vapplica
9.7. Size:244K fairchild semi
fdc6036p.pdf
February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V
9.8. Size:202K onsemi
fdc604p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.9. Size:212K tysemi
fdc6020c kdc6020c.pdf
SMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification KDC6020C(FDC6020C)( )SOT-23-6Unit: mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V)6 5 4DS(ON) GS R 39m (V = 2.5V)DS D P-ChannelV =-20V I =-4.2A0to0.1 RDS(ON) 55m (VGS =-4.5V)DS(ON) GS R 82m (V =-2.5V)1 2
9.10. Size:877K cn vbsemi
fdc602p.pdf
FDC602Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha
Datasheet: STU307S
, FDC3612
, STU3055L
, FDC365P
, FDC5614P
, FDC5661N-F085
, FDC602P
, FDC604P
, IRF640
, FDC608PZ
, FDC610PZ
, FDC6310P
, FDC6312P
, FDC6318P
, FDC6320C
, STU303S
, FDC6321C
.
