All MOSFET. VBZE40P10 Datasheet

 

VBZE40P10 Datasheet and Replacement


   Type Designator: VBZE40P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033(typ) Ohm
   Package: TO252
 

 VBZE40P10 substitution

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VBZE40P10 Datasheet (PDF)

 ..1. Size:1013K  cn vbsemi
vbze40p10.pdf pdf_icon

VBZE40P10

VBZE40P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directiv

 7.1. Size:1080K  cn vbsemi
vbze40p06.pdf pdf_icon

VBZE40P10

VBZE40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 60 160.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Co

 7.2. Size:972K  cn vbsemi
vbze40p03.pdf pdf_icon

VBZE40P10

VBZE40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

 8.1. Size:1660K  cn vbsemi
vbze40n03.pdf pdf_icon

VBZE40P10

VBZE40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.008at VGS = 10 V 7530 30 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Datasheet: VBZE30N03 , VBZE30N06 , VBZE30N10 , VBZE40N03 , VBZE40N06 , VBZE40N10 , VBZE40P03 , VBZE40P06 , RU7088R , VBZE4204 , VBZE4286 , VBZE45N03 , VBZE50N03 , VBZE50N04 , VBZE50N06 , VBZE50P03 , VBZE50P04 .

History: CS7N60A7HD | AUIRFS8408 | NVMFS5C410N | SI7892BDP | STD6N65M2 | IPB80N06S4L-05 | SM140R50CT1TL

Keywords - VBZE40P10 MOSFET datasheet

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