VBZE50N04
MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZE50N04
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 36(max)
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 725
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ)
Ohm
Package:
TO252
VBZE50N04
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZE50N04
Datasheet (PDF)
..1. Size:1323K cn vbsemi
vbze50n04.pdf 
VBZE50N04www.VBsemi.comN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.012 at VGS = 10 V 5040 36 nC0.014 at VGS = 4.5 V 40APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETA
6.1. Size:1066K cn vbsemi
vbze50n06.pdf
VBZE50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.009 at VGS = 10 V 60 Material categorization:600.011at VGS = 4.5 V 50DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
6.2. Size:2414K cn vbsemi
vbze50n03.pdf
VBZE50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5330 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO
8.1. Size:486K cn vbsemi
vbze50p03.pdf
VBZE50P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.011 at VGS = - 10 V 50RoHS*- 30COMPLIANT0.013 at VGS = - 4.5 V 45STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitG
8.2. Size:1186K cn vbsemi
vbze50p04.pdf
VBZE50P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V)-40 Package with low thermal resistanceRDS(on) () at VGS = -10 V0.010 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V0.013ID (A) -65Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C
8.3. Size:1245K cn vbsemi
vbze50p06.pdf
VBZE50P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter
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