FDC608PZ PDF and Equivalents Search

 

FDC608PZ Specs and Replacement

Type Designator: FDC608PZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 270 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SSOT6

FDC608PZ substitution

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FDC608PZ datasheet

 ..1. Size:144K  fairchild semi
fdc608pz.pdf pdf_icon

FDC608PZ

June 2006 tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye... See More ⇒

 9.1. Size:211K  fairchild semi
fdc6020c.pdf pdf_icon

FDC608PZ

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS... See More ⇒

 9.2. Size:62K  fairchild semi
fdc602p f095.pdf pdf_icon

FDC608PZ

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of ... See More ⇒

 9.3. Size:154K  fairchild semi
fdc606p.pdf pdf_icon

FDC608PZ

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchild s low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V... See More ⇒

Detailed specifications: FDC3612 , STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , IRFZ44 , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , FDC6320C , STU303S , FDC6321C , STU3030NLS .

Keywords - FDC608PZ MOSFET specs

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