All MOSFET. VBZE75N03 Datasheet

 

VBZE75N03 Datasheet and Replacement


   Type Designator: VBZE75N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006(typ) Ohm
   Package: TO252
 

 VBZE75N03 substitution

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VBZE75N03 Datasheet (PDF)

 ..1. Size:1796K  cn vbsemi
vbze75n03.pdf pdf_icon

VBZE75N03

VBZE75N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.006at VGS = 10 V 10030 75nC0.008at VGS = 4.5 V 75APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

 9.1. Size:829K  cn vbsemi
vbze7843.pdf pdf_icon

VBZE75N03

VBZE7843www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0025 at VGS = 10 V 16030 80 nC0.005 at VGS = 4.5 V 110APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 9.2. Size:1442K  cn vbsemi
vbze70n03.pdf pdf_icon

VBZE75N03

VBZE70N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004.5at VGS = 10 V 11030 70 nC0.006at VGS = 4.5 V 98APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB

Datasheet: VBZE50N06 , VBZE50P03 , VBZE50P04 , VBZE50P06 , VBZE5N20 , VBZE60N02 , VBZE60N03 , VBZE70N03 , 5N50 , VBZE7843 , VBZE80N03 , VBZE80N06 , VBZE80N10 , VBZE80P03 , VBZE90N03 , VBZE9N03 , VBZFB06N02 .

History: NVMTS0D6N04C

Keywords - VBZE75N03 MOSFET datasheet

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