VBZE7843 Specs and Replacement

Type Designator: VBZE7843

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 typ Ohm

Package: TO252

VBZE7843 substitution

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VBZE7843 datasheet

 ..1. Size:829K  cn vbsemi
 vbze7843.pdf pdf_icon

VBZE7843

VBZE7843 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0025 at VGS = 10 V 160 30 80 nC 0.005 at VGS = 4.5 V 110 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A... See More ⇒

 9.1. Size:1796K  cn vbsemi
 vbze75n03.pdf pdf_icon

VBZE7843

VBZE75N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.006at VGS = 10 V 100 30 75nC 0.008at VGS = 4.5 V 75 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOL... See More ⇒

 9.2. Size:1442K  cn vbsemi
 vbze70n03.pdf pdf_icon

VBZE7843

VBZE70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004.5at VGS = 10 V 110 30 70 nC 0.006at VGS = 4.5 V 98 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB... See More ⇒

Detailed specifications: VBZE50P03, VBZE50P04, VBZE50P06, VBZE5N20, VBZE60N02, VBZE60N03, VBZE70N03, VBZE75N03, AO4468, VBZE80N03, VBZE80N06, VBZE80N10, VBZE80P03, VBZE90N03, VBZE9N03, VBZFB06N02, VBZFB10N20

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