VBZE7843 Datasheet and Replacement
Type Designator: VBZE7843
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1525 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025(typ) Ohm
Package: TO252
VBZE7843 substitution
VBZE7843 Datasheet (PDF)
vbze7843.pdf

VBZE7843www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0025 at VGS = 10 V 16030 80 nC0.005 at VGS = 4.5 V 110APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA
vbze75n03.pdf

VBZE75N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.006at VGS = 10 V 10030 75nC0.008at VGS = 4.5 V 75APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL
vbze70n03.pdf

VBZE70N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004.5at VGS = 10 V 11030 70 nC0.006at VGS = 4.5 V 98APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB
Datasheet: VBZE50P03 , VBZE50P04 , VBZE50P06 , VBZE5N20 , VBZE60N02 , VBZE60N03 , VBZE70N03 , VBZE75N03 , IRFP064N , VBZE80N03 , VBZE80N06 , VBZE80N10 , VBZE80P03 , VBZE90N03 , VBZE9N03 , VBZFB06N02 , VBZFB10N20 .
History: SIHFD9220 | IXTA76N25T | HGM090NE6AL | QM4014D | UTT30P06G-TM3-T | STU456S | SFF240
Keywords - VBZE7843 MOSFET datasheet
VBZE7843 cross reference
VBZE7843 equivalent finder
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VBZE7843 replacement
History: SIHFD9220 | IXTA76N25T | HGM090NE6AL | QM4014D | UTT30P06G-TM3-T | STU456S | SFF240



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