All MOSFET. VBZE90N03 Datasheet

 

VBZE90N03 Datasheet and Replacement


   Type Designator: VBZE90N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038(typ) Ohm
   Package: TO252
 

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VBZE90N03 Datasheet (PDF)

 ..1. Size:829K  cn vbsemi
 vbze90n03.pdf pdf_icon

VBZE90N03

VBZE90N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003.8at VGS = 10 V 12030 70 nC0.006at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 9.1. Size:2374K  cn vbsemi
 vbze9n03.pdf pdf_icon

VBZE90N03

VBZE9N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8530 70nC0.009at VGS = 4.5 V 58APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

Datasheet: VBZE60N03 , VBZE70N03 , VBZE75N03 , VBZE7843 , VBZE80N03 , VBZE80N06 , VBZE80N10 , VBZE80P03 , IRF840 , VBZE9N03 , VBZFB06N02 , VBZFB10N20 , VBZFB12P10 , VBZFB15N10 , VBZFB20N06 , VBZFB20P06 , VBZFB30N06 .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - VBZE90N03 MOSFET datasheet

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