All MOSFET. VBZE90N03 Datasheet

 

VBZE90N03 Datasheet and Replacement


   Type Designator: VBZE90N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038(typ) Ohm
   Package: TO252
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VBZE90N03 Datasheet (PDF)

 ..1. Size:829K  cn vbsemi
 vbze90n03.pdf pdf_icon

VBZE90N03

VBZE90N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003.8at VGS = 10 V 12030 70 nC0.006at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 9.1. Size:2374K  cn vbsemi
 vbze9n03.pdf pdf_icon

VBZE90N03

VBZE9N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8530 70nC0.009at VGS = 4.5 V 58APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BLP023N10-T | DMNH10H028SCT | WML11N80M3 | STF45N10F7 | IPP80N08S2L-07 | SI2302DDS | IRLS4030

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