VBZE90N03 Specs and Replacement

Type Designator: VBZE90N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 typ Ohm

Package: TO252

VBZE90N03 substitution

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VBZE90N03 datasheet

 ..1. Size:829K  cn vbsemi
 vbze90n03.pdf pdf_icon

VBZE90N03

VBZE90N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.003.8at VGS = 10 V 120 30 70 nC 0.006at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A... See More ⇒

 9.1. Size:2374K  cn vbsemi
 vbze9n03.pdf pdf_icon

VBZE90N03

VBZE9N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007at VGS = 10 V 85 30 70nC 0.009at VGS = 4.5 V 58 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT... See More ⇒

Detailed specifications: VBZE60N03, VBZE70N03, VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06, VBZE80N10, VBZE80P03, IRF840, VBZE9N03, VBZFB06N02, VBZFB10N20, VBZFB12P10, VBZFB15N10, VBZFB20N06, VBZFB20P06, VBZFB30N06

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.