VBZFB06N02 Specs and Replacement
Type Designator: VBZFB06N02
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 typ Ohm
Package: TO251
- MOSFET ⓘ Cross-Reference Search
VBZFB06N02 datasheet
..1. Size:1326K cn vbsemi
vbzfb06n02.pdf 
VBZFB06N02 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free RDS(on) VGS = 10 V 20 m TrenchFET Gen III Power MOSFET 28 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 35 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S... See More ⇒
9.1. Size:999K cn vbsemi
vbzfb40p04.pdf
VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View... See More ⇒
9.2. Size:1090K cn vbsemi
vbzfb60n03.pdf
VBZFB60N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS 30 FEATURES V TrenchFET Power MOSFET RDS(on) VGS = 10 V 2 m 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 2.4 m Compliant to RoHS Directive 2011/65/EU 110 ID A Configuration Single APPLICATIONS TO-251 D OR-ing Server DC/DC G Drain Connected to Drain-Tab G D S S N-C... See More ⇒
9.3. Size:1179K cn vbsemi
vbzfb40p06.pdf
VBZFB40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES -60 V VDS Halogen-free According to IEC 61249-2-21 RDS(on),typ VGS=10V 48 m Definition TrenchFET Power MOSFET 57 RDS(on),typ VGS=4.5V m 100 % UIS Tested A ID -30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter TO-251 DC/DC Converter for... See More ⇒
9.4. Size:1220K cn vbsemi
vbzfb70n03.pdf
VBZFB70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 30 V 100 % Rg and UIS Tested 3.5 RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 4.5 V 4.5 m APPLICATIONS 100 ID A Configuration Single OR-ing Server D TO-251 DC/DC G S G D S Top View N-Channel MOSFET ... See More ⇒
9.5. Size:1087K cn vbsemi
vbzfb12p10.pdf
VBZFB12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES -100 V VDS Halogen-free According to IEC 61249-2-21 m RDS(on),typ VGS=10V 215 Definition TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 234 m 100 % Rg and UIS Tested A ID -9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Converters TO-251 S G D G D S P-Cha... See More ⇒
9.6. Size:1232K cn vbsemi
vbzfb50n03.pdf
VBZFB50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 10 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 15 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS ID 50 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S... See More ⇒
9.7. Size:840K cn vbsemi
vbzfb50n06.pdf
VBZFB50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.010 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.012 ID (A) 50 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other... See More ⇒
9.9. Size:821K cn vbsemi
vbzfb40n06.pdf
VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S... See More ⇒
9.10. Size:961K cn vbsemi
vbzfb30n06.pdf
VBZFB30N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.009 ID (A) 70 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 ... See More ⇒
9.11. Size:1270K cn vbsemi
vbzfb40n03.pdf
VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 15 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 20 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 40 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D... See More ⇒
9.12. Size:946K cn vbsemi
vbzfb20n06.pdf
VBZFB20N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.020 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.025 ID (A) 35 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other... See More ⇒
9.13. Size:956K cn vbsemi
vbzfb20p06.pdf
VBZFB20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES -60 V VDS TrenchFET Power MOSFET m RDS(on),typ VGS=10V 66 100 % UIS Tested RDS(on),typ VGS=4.5V 80 m APPLICATIONS A ID -25 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source V... See More ⇒
9.14. Size:1395K cn vbsemi
vbzfb15n10.pdf
VBZFB15N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES V VDS 100 DT-Trench Power MOSFET 175 C Junction Temperature RDS(on),typ VGS=10V m 115 100 % Rg Tested RDS(on),typ VGS=4.5V m 120 15 A ID APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Param... See More ⇒
9.15. Size:899K cn vbsemi
vbzfb80n03.pdf
VBZFB80N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 6 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET RDS(on) VGS = 4.5 V 8 m 100 % Rg Tested RoHS ID 70 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S ... See More ⇒
9.16. Size:644K cn vbsemi
vbzfb40n10.pdf
VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-... See More ⇒
9.17. Size:660K cn vbsemi
vbzfb10n20.pdf
VBZFB10N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIM... See More ⇒
Detailed specifications: VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06, VBZE80N10, VBZE80P03, VBZE90N03, VBZE9N03, IRF540N, VBZFB10N20, VBZFB12P10, VBZFB15N10, VBZFB20N06, VBZFB20P06, VBZFB30N06, VBZFB40N03, VBZFB40N06
Keywords - VBZFB06N02 MOSFET specs
VBZFB06N02 cross reference
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