VBZFB40N10 Specs and Replacement

Type Designator: VBZFB40N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 typ Ohm

Package: TO251

VBZFB40N10 substitution

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VBZFB40N10 datasheet

 ..1. Size:644K  cn vbsemi
 vbzfb40n10.pdf pdf_icon

VBZFB40N10

VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-... See More ⇒

 6.1. Size:821K  cn vbsemi
 vbzfb40n06.pdf pdf_icon

VBZFB40N10

VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S... See More ⇒

 6.2. Size:1270K  cn vbsemi
 vbzfb40n03.pdf pdf_icon

VBZFB40N10

VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 15 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 20 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 40 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D... See More ⇒

 7.1. Size:999K  cn vbsemi
 vbzfb40p04.pdf pdf_icon

VBZFB40N10

VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View... See More ⇒

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Detailed specifications: VBZFB10N20, VBZFB12P10, VBZFB15N10, VBZFB20N06, VBZFB20P06, VBZFB30N06, VBZFB40N03, VBZFB40N06, IRF640N, VBZFB40P03, VBZFB40P04, VBZFB40P06, VBZFB50N03, VBZFB50N06, VBZFB60N03, VBZFB70N03, VBZFB80N03

Keywords - VBZFB40N10 MOSFET specs

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