VBZL80N04 Specs and Replacement

Type Designator: VBZL80N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 typ Ohm

Package: TO263

VBZL80N04 substitution

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VBZL80N04 datasheet

 ..1. Size:1636K  cn vbsemi
 vbzl80n04.pdf pdf_icon

VBZL80N04

VBZL80N04 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET 40 VDS V Maximum 175 C junction temperature 5 RDS(on) VGS = 10 V m 100 % Rg and UIS tested 6 RDS(on) VGS = 4.5 V m Material categorization 110 ID A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G... See More ⇒

 6.1. Size:2032K  cn vbsemi
 vbzl80n03.pdf pdf_icon

VBZL80N04

VBZL80N03 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 175 C Junction Temperature 200 VDS V Low Thermal Resistance Package RDS(on) VGS = 10 V 48 m PWM Optimized for Fast Switching ID 40 A Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Isolated DC/DC Converters - Primary-Si... See More ⇒

 6.2. Size:1391K  cn vbsemi
 vbzl80n06.pdf pdf_icon

VBZL80N04

VBZL80N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS 60 V Package with low thermal resistance RDS(on) VGS = 10 V 6 m AEC-Q101 qualified d RDS(on) VGS = 4.5 V 11 m 100 % Rg and UIS tested ID 100 A Configuration Single TO-263 D G S S D D G G N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS ... See More ⇒

 6.3. Size:1613K  cn vbsemi
 vbzl80n08.pdf pdf_icon

VBZL80N04

VBZL80N08 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS 80 V Maximum 175 C junction temperature RDS(on) VGS = 10 V 6 m 100 % Rg and UIS tested RDS(on) VGS = 4.5 V m 10 Material categorization ID 120 A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G G... See More ⇒

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Detailed specifications: VBZL150N03, VBZL30N06, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06, VBZL70N03, VBZL80N03, IRF4905, VBZL80N06, VBZL80N08, VBZM100N03, VBZM100N04, VBZM120N15, VBZM12P10, VBZM13N50, VBZM150N03

Keywords - VBZL80N04 MOSFET specs

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