VBZM150N10 Specs and Replacement

Type Designator: VBZM150N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.127 typ Ohm

Package: TO220AB

VBZM150N10 substitution

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VBZM150N10 datasheet

 ..1. Size:637K  cn vbsemi
vbzm150n10.pdf pdf_icon

VBZM150N10

VBZM150N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.127at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE M... See More ⇒

 6.1. Size:1256K  cn vbsemi
vbzm150n03.pdf pdf_icon

VBZM150N10

VBZM150N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 30 DT-Trench Power MOSFET 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0020 Compliant to RoHS Directive 2011/65/EU RDS(on) ( ) at VGS = 4.5 V 0.0028 ID (A) 140 APPLICATIONS Configuration Single OR-ing TO-220AB Server DC/DC D G S G D S N-Channel MOS... See More ⇒

 9.1. Size:984K  cn vbsemi
vbzm100n04.pdf pdf_icon

VBZM150N10

VBZM100N04 www.VBsemi.com N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS TrenchFET Power MOSFET 40 V RDS(on) VGS = 10 V 2 100 % Rg and UIS Tested m RoHS ID 180 A COMPLIANT APPLICATIONS Configuration Single Synchronous Rectification Power Supplies TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot... See More ⇒

 9.2. Size:781K  cn vbsemi
vbzm100n03.pdf pdf_icon

VBZM150N10

VBZM100N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.001 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.002 Package with Low Thermal Resistance ID (A) 260 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 20... See More ⇒

Detailed specifications: VBZL80N06, VBZL80N08, VBZM100N03, VBZM100N04, VBZM120N15, VBZM12P10, VBZM13N50, VBZM150N03, 13N50, VBZM18N20, VBZM20N10, VBZM20P06, VBZM30N06, VBZM3710, VBZM40N03, VBZM40N10, VBZM40P06

Keywords - VBZM150N10 MOSFET specs

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