VBZM150N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZM150N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28(max) nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.127(typ) Ohm
Package: TO220AB
VBZM150N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZM150N10 Datasheet (PDF)
vbzm150n10.pdf
VBZM150N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.127at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M
vbzm150n03.pdf
VBZM150N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V)30 DT-Trench Power MOSFET 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0020 Compliant to RoHS Directive 2011/65/EURDS(on) () at VGS = 4.5 V 0.0028ID (A) 140APPLICATIONSConfiguration Single OR-ingTO-220AB Server DC/DCDGSG D SN-Channel MOS
vbzm100n04.pdf
VBZM100N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS TrenchFET Power MOSFET40 VRDS(on) VGS = 10 V 2 100 % Rg and UIS TestedmRoHSID 180ACOMPLIANT APPLICATIONSConfiguration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot
vbzm100n03.pdf
VBZM100N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.001 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.002 Package with Low Thermal ResistanceID (A) 260 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 20
vbzm13n50.pdf
VBZM13N50www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian
vbzm120n15.pdf
VBZM120N15www.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n
vbzm12p10.pdf
VBZM12P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS -100VDefinitionRDS(on) VGS = 10 V 167 m TrenchFET Power MOSFET 100 % Rg and UIS TestedRDS(on) VGS = 4.5 V 178 m Compliant to RoHS Directive 2002/95/ECID -18AConfiguration SingleAPPLICATIONS Power Switch Load Switch
vbzm18n20.pdf
VBZM18N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V0.91 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DG
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IXFK140N20P
History: IXFK140N20P
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