All MOSFET. VBZM20P06 Datasheet

 

VBZM20P06 Datasheet and Replacement


   Type Designator: VBZM20P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO220AB
 
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VBZM20P06 Datasheet (PDF)

 ..1. Size:720K  cn vbsemi
 vbzm20p06.pdf pdf_icon

VBZM20P06

VBZM20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURES-60VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 100 % UIS Tested62 mRDS(on) VGS = 4.5 V 74 mAPPLICATIONSID -40A Load SwitchConfiguration SingleSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

 8.1. Size:648K  cn vbsemi
 vbzm20n10.pdf pdf_icon

VBZM20P06

VBZM20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE

Datasheet: VBZM100N04 , VBZM120N15 , VBZM12P10 , VBZM13N50 , VBZM150N03 , VBZM150N10 , VBZM18N20 , VBZM20N10 , 4435 , VBZM30N06 , VBZM3710 , VBZM40N03 , VBZM40N10 , VBZM40P06 , VBZM4N20 , VBZM50N03 , VBZM50N06 .

History: STS2300S | NTMS4N01R2G

Keywords - VBZM20P06 MOSFET datasheet

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