VBZM20P06 MOSFET Datasheet: P-Ch, 60V, 40A. Full specification with pinout and replacement list

VBZM20P06 Specs and Replacement

Type Designator: VBZM20P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TO220AB

VBZM20P06 substitution

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VBZM20P06 datasheet

..1. Size:720K cn vbsemi
vbzm20p06.pdf pdf_icon

VBZM20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY FEATURES -60 VDS V TrenchFET Power MOSFET RDS(on) VGS = 10 V 100 % UIS Tested 62 m RDS(on) VGS = 4.5 V 74 m APPLICATIONS ID -40 A Load Switch Configuration Single S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy... See More ⇒

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VBZM20N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.017 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE ... See More ⇒

Detailed specifications: VBZM100N04, VBZM120N15, VBZM12P10, VBZM13N50, VBZM150N03, VBZM150N10, VBZM18N20, VBZM20N10, 5N65, VBZM30N06, VBZM3710, VBZM40N03, VBZM40N10, VBZM40P06, VBZM4N20, VBZM50N03, VBZM50N06