All MOSFET. VBZM630 Datasheet

 

VBZM630 Datasheet and Replacement


   Type Designator: VBZM630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.270(typ) Ohm
   Package: TO220AB
 

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VBZM630 Datasheet (PDF)

 ..1. Size:825K  cn vbsemi
 vbzm630.pdf pdf_icon

VBZM630

VBZM630www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RAT

 0.1. Size:931K  cn vbsemi
 vbzm630y.pdf pdf_icon

VBZM630

VBZM630Ywww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ( )ID (A) 175 C Junction TemperatureRoHS0.058at VGS =10V35200 COMPLIANT New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDGG D SSN-Channel MOSFETABSOLUTE MAXIMUM RA

 9.1. Size:936K  cn vbsemi
 vbzm60p03.pdf pdf_icon

VBZM630

VBZM60P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS -30V TrenchFET Power MOSFETRDS(on) VGS = 10 V 8m 100 % Rg TestedRoHSRDS(on) VGS = 4.5 V 11mCOMPLIANT 100 % UIS TestedID -70AAPPLICATIONSConfiguration Single Load Switch Notebook Adaptor SwitchTO-220AB S G G D SD Top ViewP-C

 9.2. Size:846K  cn vbsemi
 vbzm60n06.pdf pdf_icon

VBZM630

VBZM60N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS 60V TrenchFET Power MOSFETRDS(on) VGS = 10 V 5 m Material categorization:ID 120AConfiguration SingleTO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-So

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Datasheet: VBZM40N03 , VBZM40N10 , VBZM40P06 , VBZM4N20 , VBZM50N03 , VBZM50N06 , VBZM60N06 , VBZM60P03 , AO4407 , VBZM630Y , VBZM75N03 , VBZM75N80 , VBZM75NF75 , VBZM80N03 , VBZM80N04 , VBZM80N06 , VBZM80N10 .

Keywords - VBZM630 MOSFET datasheet

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