All MOSFET. FDC6321C Datasheet

 

FDC6321C Datasheet and Replacement


   Type Designator: FDC6321C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.68(0.46) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8(9) nS
   Cossⓘ - Output Capacitance: 28(34) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45(1.1) Ohm
   Package: SSOT6
 

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FDC6321C Datasheet (PDF)

 ..1. Size:130K  fairchild semi
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FDC6321C

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement modeN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 Vfield effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.high density process is especi

 ..2. Size:542K  onsemi
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FDC6321C

FDC6321CDual N & P Channel , Digital FET FeaturesN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 VGeneral DescriptionP-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.These dual N & P Channel logic level enhancement mode Very low level gate drive requirements allowing directfield effect transistors are produced using ON operation in 3 V circuits. VGS(th)

 ..3. Size:925K  cn vbsemi
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FDC6321C

FDC6321Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

 8.1. Size:121K  fairchild semi
fdc6323l.pdf pdf_icon

FDC6321C

March 1999 FDC6323LIntegrated Load Switch General Description FeaturesVDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8VThese Integrated Load Switches are produced usingVDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process isHigh density cell design for extremely low on-resistance.especially

Datasheet: FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , FDC6320C , STU303S , IRF3710 , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 , STU15N20 , FDC637BNZ , FDC638APZ .

History: IPSA70R2K0P7S | KP103I | AP9563GM-HF | STS3620 | RQK0601AGDQS | APT1002R4CN | IXFK32N80P

Keywords - FDC6321C MOSFET datasheet

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