All MOSFET. VBZM80N06 Datasheet

 

VBZM80N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZM80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003(typ) Ohm
   Package: TO220AB

 VBZM80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZM80N06 Datasheet (PDF)

 ..1. Size:1219K  cn vbsemi
 vbzm80n06.pdf

VBZM80N06 VBZM80N06

VBZM80N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.003 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V0.009 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9

 6.1. Size:914K  cn vbsemi
 vbzm80n04.pdf

VBZM80N06 VBZM80N06

VBZM80N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 40 V 100 % Rg and UIS Tested6RDS(on) VGS = 10 V mRoHSID 110AAPPLICATIONS COMPLIANT Configuration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

 6.2. Size:937K  cn vbsemi
 vbzm80n03.pdf

VBZM80N06 VBZM80N06

VBZM80N03www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) a 180 100 % Rg and UIS TestedConfiguration SingleDTO-220GTop ViewSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

 7.1. Size:835K  cn vbsemi
 vbzm80n80.pdf

VBZM80N06 VBZM80N06

VBZM80N80www.VBsemi.comN-Channel 8 0-V (D-S) Super Trench Power MOSFETFEATURESPRODUCT SUMMARY Super Trench technology Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Excellent gate charge x Rds (on) product(FOM)0.0034 at VGS = 10 V 19580 75nC Very low on-resfistance Rds (on)0.0036 at VGS = 7.5 V 185 100 % Rg and UIS TestedTO-220ABAPPLICATIONSD

 7.2. Size:810K  cn vbsemi
 vbzm80n10.pdf

VBZM80N06 VBZM80N06

VBZM80N10www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETPRODUCT SUMMARYFEATURESVDS (V) TrenchFET Power MOSFET100 175 C Maximum Junction TemperatureRDS(on) () at VGS = 10 V 0.009 Compliant to RoHS Directive 2002/95/ECRDS(on) () at VGS = 4.5 V0.020ID (A)100Configuration SingleTO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATIN

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