All MOSFET. VBZMB18N50 Datasheet

 

VBZMB18N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZMB18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220FP

 VBZMB18N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZMB18N50 Datasheet (PDF)

 ..1. Size:1258K  cn vbsemi
 vbzmb18n50.pdf

VBZMB18N50 VBZMB18N50

VBZMB18N50www.VBsemi.comN-Channel (D-S) Power MOSFET550V FEATURESPRODUCT SUMMARY Optimal DesignVDS (V) 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.26- Low Input Capacitance (Ciss)Qg max. (nC) 150- Reduced Capacitive Switching LossesQgs (nC) 12- High Body Diode RuggednessQgd (nC) 25- Avalanche Energy Rated (UIS)Configuration

 6.1. Size:827K  cn vbsemi
 vbzmb18n65.pdf

VBZMB18N50 VBZMB18N50

VBZMB18N65www.VBsemi.comN-Channel 650V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) Low input capacitance (Ciss)71Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche ener

 8.1. Size:617K  cn vbsemi
 vbzmb12n65.pdf

VBZMB18N50 VBZMB18N50

VBZMB12N65www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configu

 8.2. Size:617K  cn vbsemi
 vbzmb10n65.pdf

VBZMB18N50 VBZMB18N50

VBZMB10N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Config

 8.3. Size:1077K  cn vbsemi
 vbzmb13n50.pdf

VBZMB18N50 VBZMB18N50

VBZMB13N50www.VBsemi.comN-Channel (D-S) Power MOSFET500V FEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.80 Improved Gate, Avalanche and Dynamic dV/dtAvailableQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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