VBZMB4N65 Datasheet and Replacement

VBZMB4N65 www.VBsemi.comN-Channel (D-S) Power MOSFET650V FEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.5RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 1

VBZMB12N65www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configu

VBZMB10N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Config

VBZMB18N50www.VBsemi.comN-Channel (D-S) Power MOSFET550V FEATURESPRODUCT SUMMARY Optimal DesignVDS (V) 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.26- Low Input Capacitance (Ciss)Qg max. (nC) 150- Reduced Capacitive Switching LossesQgs (nC) 12- High Body Diode RuggednessQgd (nC) 25- Avalanche Energy Rated (UIS)Configuration

VBZMB2N65www.VBsemi.comN-Channel (D-S) Power MOSFET650V FEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5

VBZMB18N65www.VBsemi.comN-Channel 650V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) Low input capacitance (Ciss)71Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche ener

VBZMB20N65Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ultra low gate charge (Qg)Qgd (nC) 33

VBZMB7N65www.VBsemi.comN-Channel (D-S) Super Junction Power MOSFET 900V FEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.95RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple

VBZMB8N60www.VBsemi.comN-Channel (D-S) Power MOSFET600V FEATURESPRODUCT SUMMARY Low gate charge Qg results in simple driveVDS (V) 600AvailablerequirementRDS(on) ()VGS = 10 V0.88 Improved gate, avalanche and dynamic dV/dtAvailableQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltageQgd (nC) 20and currentConf

VBZMB13N50www.VBsemi.comN-Channel (D-S) Power MOSFET500V FEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.80 Improved Gate, Avalanche and Dynamic dV/dtAvailableQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

VBZMB20N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy rated (UIS)Qgd (nC) 2.7Configura