VBZQA120N03 Specs and Replacement

Type Designator: VBZQA120N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1725 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: DFN5X6

VBZQA120N03 substitution

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VBZQA120N03 datasheet

 ..1. Size:1414K  cn vbsemi
 vbzqa120n03.pdf pdf_icon

VBZQA120N03

VBZQA120N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 160 APPLICATIONS 30 18 nC 0.0025 at VGS = 4.5 V 130 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLU... See More ⇒

 9.1. Size:1469K  cn vbsemi
 vbzqa50n03.pdf pdf_icon

VBZQA120N03

VBZQA50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 80 30 31 nC 0.009 at VGS = 4.5 V 60 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S... See More ⇒

 9.2. Size:1164K  cn vbsemi
 vbzqa80n03.pdf pdf_icon

VBZQA120N03

VBZQA80N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.003 at VGS = 10 V 120 APPLICATIONS 30 71 nC 0.005 at VGS = 4.5 V 90 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ... See More ⇒

 9.3. Size:1919K  cn vbsemi
 vbzqa50p03.pdf pdf_icon

VBZQA120N03

VBZQA50P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES -30 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 11 m TrenchFET Power MOSFET 18 RDS(on),typ VGS=4.5V m Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm ID -45 A Profile 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC... See More ⇒

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Detailed specifications: VBZMB18N65, VBZMB20N65, VBZMB20N65S, VBZMB2N65, VBZMB4N65, VBZMB7N65, VBZMB8N60, VBZP50N50S, IRF1405, VBZQA50N03, VBZQA50P03, VBZQA80N03, VBZQF50N03, VBZQF50P03, WNM2016-3, WNM2020-3, WPM2015-3-TR

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