All MOSFET. VBZQA120N03 Datasheet

 

VBZQA120N03 Datasheet and Replacement


   Type Designator: VBZQA120N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 20(max) nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: DFN5X6
 

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VBZQA120N03 Datasheet (PDF)

 ..1. Size:1414K  cn vbsemi
 vbzqa120n03.pdf pdf_icon

VBZQA120N03

VBZQA120N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 160APPLICATIONS3018 nC0.0025 at VGS = 4.5 V 130 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLU

 9.1. Size:1469K  cn vbsemi
 vbzqa50n03.pdf pdf_icon

VBZQA120N03

VBZQA50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 8030 31 nC0.009 at VGS = 4.5 V 60APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S

 9.2. Size:1164K  cn vbsemi
 vbzqa80n03.pdf pdf_icon

VBZQA120N03

VBZQA80N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.003 at VGS = 10 V 120APPLICATIONS30 71 nC0.005 at VGS = 4.5 V 90 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFET

 9.3. Size:1919K  cn vbsemi
 vbzqa50p03.pdf pdf_icon

VBZQA120N03

VBZQA50P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURES-30 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 11 m TrenchFET Power MOSFET18RDS(on),typ VGS=4.5V m Low Thermal Resistance PowerPAKPackage with Small Size and Low 1.07 mmID -45AProfile 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC

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