NCE0110AS PDF Specs and Replacement
Type Designator: NCE0110AS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 10
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 178
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
SOP8
-
MOSFET ⓘ Cross-Reference Search
NCE0110AS PDF Specs
..1. Size:425K ncepower
nce0110as.pdf 
Pb Free Product NCE0110AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON) ... See More ⇒
6.1. Size:448K ncepower
nce0110ak.pdf 
Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON) ... See More ⇒
7.1. Size:402K ncepower
nce0110k.pdf 
Pb Free Product http //www.ncepower.com NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON) ... See More ⇒
8.1. Size:441K 1
nce0117k.pdf 
NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.2. Size:373K ncepower
nce0117.pdf 
Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.4. Size:653K ncepower
nce0117ak.pdf 
NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R ... See More ⇒
8.5. Size:922K ncepower
nce011n30gu.pdf 
NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS ... See More ⇒
8.6. Size:436K ncepower
nce0117k.pdf 
Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.7. Size:422K ncepower
nce0115ak.pdf 
http //www.ncepower.com NCE0115AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON) ... See More ⇒
8.8. Size:355K ncepower
nce0117i.pdf 
NCE0117I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON) ... See More ⇒
8.9. Size:833K cn vbsemi
nce0117.pdf 
NCE0117 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI... See More ⇒
Detailed specifications: ZXMP10A17GTA
, ZXMP6A18DN8TA
, NCE0102
, NCE0103M
, NCE0103Y
, NCE0106R
, NCE0106Z
, NCE0110AK
, IRF540N
, NCE0110K
, NCE0115K
, NCE0117I
, NCE0125AI
, NCE0125AK
, NCE0130A
, NCE0130KA
, NCE0140K2
.
Keywords - NCE0110AS MOSFET specs
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