All MOSFET. NCE0140KA Datasheet

 

NCE0140KA MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE0140KA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252

 NCE0140KA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE0140KA Datasheet (PDF)

 ..1. Size:402K  ncepower
nce0140ka.pdf

NCE0140KA
NCE0140KA

Pb Free ProductNCE0140KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 6.1. Size:410K  ncepower
nce0140k2.pdf

NCE0140KA
NCE0140KA

Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 7.1. Size:318K  ncepower
nce0140ia.pdf

NCE0140KA
NCE0140KA

Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 7.2. Size:752K  ncepower
nce0140i2.pdf

NCE0140KA
NCE0140KA

http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR

 7.3. Size:628K  ncepower
nce0140ak2.pdf

NCE0140KA
NCE0140KA

NCE0140AK2http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140AK2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40A Schematic diagramDS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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