NCE20P70G MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE20P70G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6
NCE20P70G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE20P70G Datasheet (PDF)
nce20p70g.pdf
Pb Free Producthttp://www.ncepower.com NCE20P70GNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)
nce20p05y.pdf
http://www.ncepower.comNCE20P05YNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20P05Y uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -5ADS DR
nce20pd05.pdf
http://www.ncepower.com NCE20PD05NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5
nce20p10j.pdf
http://www.ncepower.comNCE20P10JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P10J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
nce20p85gu.pdf
http://www.ncepower.com NCE20P85GUNCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE20P85GU uses advanced trench technology and VDS =-20V,ID =-85A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce20p08j.pdf
http://www.ncepower.comNCE20P08JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P08J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
nce20p09s.pdf
http://www.ncepower.comNCE20P09SNCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE20P09S uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -9AD
nce20p05j.pdf
http://www.ncepower.comNCE20P05JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P05J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
nce20p45q.pdf
Pb Free Producthttp://www.ncepower.com NCE20P45QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-19V,ID =-45A Schematic diagram RDS(ON)
nce20p07n.pdf
http://www.ncepower.com NCE20P07NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =
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