NCE2301 MOSFET Datasheet: P-Ch, 20V, 3A. Full specification with pinout and replacement list

NCE2301 Specs and Replacement

Type Designator: NCE2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT23

NCE2301 substitution

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NCE2301 datasheet

..1. Size:241K ncepower
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Pb Free Product http //www.ncepower.com NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A ... See More ⇒

0.1. Size:262K ncepower
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Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram ... See More ⇒

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Pb Free Product http //www.ncepower.com NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -15V,... See More ⇒

0.3. Size:330K ncepower
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Pb Free Product http //www.ncepower.com NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒