NCE3095G MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCE3095G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.4 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: DFN5X6-8L

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NCE3095G Datasheet (PDF)

..1. Size:367K ncepower
nce3095g.pdf pdf_icon

http://www.ncepower.com NCE3095GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =95A used in a wide variety of applications. RDS(ON)=4.1m (typical) @ VGS=10V RDS(ON)=5.1m (typical) @ VGS=4.5V Application DC/DC

7.1. Size:356K ncepower
nce3095k.pdf pdf_icon

http://www.ncepower.com NCE3095KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =95A Schematic diagram RDS(ON)

8.1. Size:385K ncepower
nce3090k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3090KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =90A RDS(ON) =4.1m (typical) @ VGS=10V Schematic diagram RDS(ON) =5.9m (typi

9.1. Size:331K ncepower
nce30h10g.pdf pdf_icon

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

9.2. Size:388K ncepower
nce3018as.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3018ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =18A Schematic diagram RDS(ON)

9.3. Size:356K ncepower
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Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

9.4. Size:308K ncepower
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http://www.ncepower.com NCE3013JNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =13A RDS(ON)

9.5. Size:384K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

9.6. Size:425K ncepower
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http://www.ncepower.com NCE30NP07SN and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

9.7. Size:741K ncepower
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http://www.ncepower.comNCE3030QNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =30ADescription DS DThe NCE3030Q uses advanced trench technology and R

9.8. Size:334K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30P25SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

9.9. Size:1027K ncepower
nce30td60bp.pdf pdf_icon

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.10. Size:754K ncepower
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http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR

9.11. Size:577K ncepower
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NCE30P55Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P55K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-30V,I =-55ADS DSchematic diagramR

9.12. Size:372K ncepower
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Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

9.13. Size:332K ncepower
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NCE3025Qhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

9.14. Size:417K ncepower
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http://www.ncepower.com NCE30H14KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =140A RDS(ON)

9.15. Size:358K ncepower
nce30td120ut.pdf pdf_icon

PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

9.16. Size:729K ncepower
nce30p40k.pdf pdf_icon

http://www.ncepower.comNCE30P40KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P40K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V = -30V,I = -40A Schematic diagramDS DR =7.8m @ V = -10V (Typ)DS(ON) GSR =11.5m @ V = -4.5V

9.17. Size:348K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30P50GNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P50G uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-30V,ID =-50A SRDS(ON)

9.18. Size:341K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

9.19. Size:352K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

9.20. Size:441K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

9.21. Size:416K ncepower
nce30h29d.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V ,ID =290A Schematic diagram RDS(ON)

9.22. Size:256K ncepower
nce30p28q.pdf pdf_icon

http://www.ncepower.com NCE30P28QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)

9.23. Size:380K ncepower
nce30np1812k.pdf pdf_icon

NCE30NP1812Khttp://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

9.24. Size:336K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3050NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

9.25. Size:658K ncepower
nce30td60bd.pdf pdf_icon

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

9.26. Size:331K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3035GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

9.27. Size:312K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3080INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

9.28. Size:321K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3080LNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

9.29. Size:268K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature

9.30. Size:651K ncepower
nce30nd35q.pdf pdf_icon

http://www.ncepower.comNCE30ND35QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30ND35Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =35A Schematic DiagramDS DR

9.31. Size:368K ncepower
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NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

9.32. Size:710K ncepower
nce30p12bs.pdf pdf_icon

http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

9.33. Size:394K ncepower
nce3007s.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3007SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-30V,ID =-6.5A RDS(ON)

9.34. Size:643K ncepower
nce30h33ll.pdf pdf_icon

http://www.ncepower.com NCE30H33LLNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =30V ,I =330ADS DThe NCE30H33LL uses advanced trench technology andR

9.35. Size:674K ncepower
nce3085k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.comNCE3085KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3085K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =85ADS DR =4.2 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =7.0m @ V =4.5V (Typ)

9.36. Size:335K ncepower
nce30p30l.pdf pdf_icon

NCE30P30Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

9.37. Size:391K ncepower
nce30h11bk.pdf pdf_icon

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

9.38. Size:343K ncepower
nce30pd08s.pdf pdf_icon

NCE30PD08SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30PD08S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Schematic diagram General Features VDS = -30V,ID = -8A RDS(ON)

9.39. Size:735K ncepower
nce30p25bq.pdf pdf_icon

http://www.ncepower.comNCE30P25BQNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V = -30V,I = -25ADS DDescriptionR

9.40. Size:742K ncepower
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PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

9.41. Size:454K ncepower
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Pb Free ProductNCE30D2519Khttp://www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDS =30V,ID =25A Schematic diagram RDS(ON)

9.42. Size:1232K ncepower
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Pb Free ProductNCE30TD60B600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.43. Size:357K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3011ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. Schematic diagram General Features

9.44. Size:333K ncepower
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http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

9.45. Size:308K ncepower
nce3008y.pdf pdf_icon

http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

9.46. Size:292K ncepower
nce30nd07bs.pdf pdf_icon

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

9.47. Size:1027K ncepower
nce30td60bt.pdf pdf_icon

Pb Free ProductNCE30TD60BT600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.48. Size:296K ncepower
nce3080ia.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3080IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

9.49. Size:1163K ncepower
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Pb Free ProductNCE30TD65BD650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.50. Size:681K ncepower
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http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

9.51. Size:398K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3010SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =10A RDS(ON)

9.52. Size:384K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

9.53. Size:355K ncepower
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http://www.ncepower.com NCE3020QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =20A RDS(ON)

9.54. Size:664K ncepower
nce3065g.pdf pdf_icon

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

9.55. Size:723K ncepower
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Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

9.56. Size:721K ncepower
nce30h12ak.pdf pdf_icon

http://www.ncepower.comNCE30H12AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H12AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =120ADS DR

9.57. Size:682K ncepower
nce30p25q.pdf pdf_icon

http://www.ncepower.com NCE30P25QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)

9.58. Size:928K ncepower
nce30np1812g.pdf pdf_icon

http://www.ncepower.comNCE30NP1812GNCE N-Channel and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30NP1812G uses advanced trench technology toprovide excellent R and low gate charge.This device isDS(ON)suitable for use in inverter and other applications.Genera FeaturesN-channel P-channelSchematic diagram V = 30V,I = 18A V = -30V,I =- 12ADS D DS DR

9.59. Size:364K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

9.60. Size:327K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3035QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

9.61. Size:373K ncepower
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Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.62. Size:301K ncepower
nce3025g.pdf pdf_icon

http://www.ncepower.com NCE3025GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

9.63. Size:1194K ncepower
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Pb Free ProductNCE30TD60BF600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.64. Size:495K ncepower
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Pb Free Producthttp://www.ncepower.com NCE3080KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

9.65. Size:749K ncepower
nce30p85k.pdf pdf_icon

http://www.ncepower.comNCE30P85KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P85K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V = -30V,I = -85A Schematic diagramDS DR =5.3m @ V = -10V (Typ)DS(ON) GSR =7.6m @ V = -4.5V (

9.66. Size:311K ncepower
nce3050i.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3050INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

9.67. Size:625K ncepower
nce30p60g.pdf pdf_icon

http://www.ncepower.comNCE30P60GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P60G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =-30V,I =-60ADS DR

9.68. Size:632K ncepower
nce30h11bg.pdf pdf_icon

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

9.69. Size:264K ncepower
nce30p06j.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30P06JNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diag

9.70. Size:296K ncepower
nce3015s.pdf pdf_icon

http://www.ncepower.com NCE3015SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =15A Schematic diagram RDS(ON)

9.71. Size:247K ncepower
nce3055.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3055NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =3.0

9.72. Size:314K ncepower
nce30p55l.pdf pdf_icon

NCE30P55Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

9.73. Size:395K ncepower
nce30h10k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H10KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.74. Size:421K ncepower
nce30p30k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30P30KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

9.75. Size:284K ncepower
nce30d0808j.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30D0808JNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features VDS = 30V,ID = 7.7A Schematic diagram RDS(ON)

9.76. Size:320K ncepower
nce3009s.pdf pdf_icon

NCE3009Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =9A Schematic diagram RDS(ON)

9.77. Size:631K ncepower
nce3008xm.pdf pdf_icon

http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram

9.78. Size:693K ncepower
nce30h15bk.pdf pdf_icon

Pb Free Producthttp://www.ncepower.comNCE30H15BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

9.79. Size:277K ncepower
nce30p10s.pdf pdf_icon

http://www.ncepower.com NCE30P10SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

9.80. Size:358K ncepower
nce30p30g.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30P30GNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON)

9.81. Size:418K ncepower
nce30h12k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H12KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

9.82. Size:342K ncepower
nce30p15as.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30P15ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

9.83. Size:694K ncepower
nce30h28.pdf pdf_icon

http://www.ncepower.comNCE30H28NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H28 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V ,I =280A Schematic diagramDS DR

9.84. Size:723K ncepower
nce3065q.pdf pdf_icon

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

9.85. Size:637K ncepower
nce30h10bg.pdf pdf_icon

http://www.ncepower.com NCE30H10BGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE30H10BG uses advanced trench technology and V =30V,I =100ADS Ddesign to provide excellent R with low gate charge. It can R

9.86. Size:371K ncepower
nce30h11g.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

9.87. Size:397K ncepower
nce3030k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3030KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

9.88. Size:633K ncepower
nce3040q.pdf pdf_icon

http://www.ncepower.comNCE3040QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3040Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =40ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =10.0m (typical) @ V =4.5VApplication DS(ON) GS DC

9.89. Size:437K ncepower
nce30np1812q.pdf pdf_icon

http://www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A

9.90. Size:413K ncepower
nce30np4030g.pdf pdf_icon

http://www.ncepower.com NCE30NP4030GNCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)

9.91. Size:1030K ncepower
nce30td65bt.pdf pdf_icon

Pb Free ProductNCE30TD65BT650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.92. Size:701K ncepower
nce30td60b nce30td60bf.pdf pdf_icon

PbFreeProduct NCE30TD60B,NCE30TD60BF 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat Hi

9.93. Size:429K ncepower
nce3065k.pdf pdf_icon

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

9.94. Size:345K ncepower
nce30p20q.pdf pdf_icon

http://www.ncepower.com NCE30P20QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON)

9.95. Size:833K ncepower
nce3068q.pdf pdf_icon

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve

9.96. Size:1031K ncepower
nce30td65bp.pdf pdf_icon

Pb Free ProductNCE30TD65BP650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

9.97. Size:301K ncepower
nce30p16q.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30P16QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)

9.98. Size:523K ncepower
nce30h10ak.pdf pdf_icon

http://www.ncepower.com NCE30H10AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.99. Size:384K ncepower
nce30h11k.pdf pdf_icon

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

9.100. Size:398K ncepower
nce30h15.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

9.101. Size:655K ncepower
nce3045g.pdf pdf_icon

http://www.ncepower.comNCE3045GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3045G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =45ADS(ON) DS Dused in a wide variety of applications. R =6.9m (typical) @ V =10VDS(ON) GSR =11.6m (typical) @ V =4.5VApplication DS(ON) GS DC

9.102. Size:399K ncepower
nce3050k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

9.103. Size:667K ncepower
nce30th60bp.pdf pdf_icon

PbFreeProduct NCE30TH60BP 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw

9.104. Size:1124K cn vbsemi
nce3035g.pdf pdf_icon

NCE3035Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 SN

9.105. Size:803K cn vbsemi
nce3007s.pdf pdf_icon

NCE3007Swww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

9.106. Size:994K cn vbsemi
nce3010s.pdf pdf_icon

NCE3010Swww.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

9.107. Size:816K cn vbsemi
nce30h10.pdf pdf_icon

NCE30H10www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewABS

9.108. Size:840K cn vbsemi
nce3080ka.pdf pdf_icon

NCE3080KAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABS

9.109. Size:953K cn vbsemi
nce30h12k.pdf pdf_icon

NCE30H12Kwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0023 at VGS = 10 V 12030 82 nC0.0032 at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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