NCE30P20Q Specs and Replacement
Type Designator: NCE30P20Q
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 302 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN3.3X3.3-8L
NCE30P20Q substitution
- MOSFET ⓘ Cross-Reference Search
NCE30P20Q datasheet
nce30p20q.pdf
http //www.ncepower.com NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON) ... See More ⇒
nce30p25s.pdf
Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON) ... See More ⇒
nce30p28q.pdf
http //www.ncepower.com NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON) ... See More ⇒
nce30p25bq.pdf
http //www.ncepower.com NCE30P25BQ NCE P-Channel Enhancement Mode Power MOSFET General Features V = -30V,I = -25A DS D Description R ... See More ⇒
Detailed specifications: NCE30H29D, NCE30ND07AS, NCE30ND07S, NCE30ND09S, NCE30NP07S, NCE30NP1812K, NCE30P12S, NCE30P15S, AOD4184A, NCE30P25S, NCE30P28Q, NCE30P30G, NCE30P30K, NCE30P50G, NCE3400, NCE3400AY, NCE3400X
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