NCE30P28Q Datasheet and Replacement
Type Designator: NCE30P28Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN3.3X3.3-8L
NCE30P28Q substitution
NCE30P28Q Datasheet (PDF)
nce30p28q.pdf

http://www.ncepower.com NCE30P28QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)
nce30p25s.pdf

Pb Free Producthttp://www.ncepower.com NCE30P25SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)
nce30p25bq.pdf

http://www.ncepower.comNCE30P25BQNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V = -30V,I = -25ADS DDescriptionR
nce30p25q.pdf

http://www.ncepower.com NCE30P25QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)
Datasheet: NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , NCE30P25S , IRFB7545 , NCE30P30G , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 , NCE3404Y .
Keywords - NCE30P28Q MOSFET datasheet
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History: AFP3403A | RP1E125XN



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