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NCE30P30G Spec and Replacement


   Type Designator: NCE30P30G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 480.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6-8L

 NCE30P30G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE30P30G Specs

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NCE30P30G

Pb Free Product http //www.ncepower.com NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON) ... See More ⇒

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NCE30P30G

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 6.2. Size:421K  ncepower
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NCE30P30G

Pb Free Product http //www.ncepower.com NCE30P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON) ... See More ⇒

 8.1. Size:334K  ncepower
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NCE30P30G

Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON) ... See More ⇒

Detailed specifications: NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , NCE30P25S , NCE30P28Q , IRFP064N , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 , NCE3404Y , NCE3406N .

Keywords - NCE30P30G MOSFET specs

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