NCE3400X MOSFET Datasheet: N-Ch, 30V, 5.1A. Full specification with pinout and replacement list

NCE3400X Specs and Replacement

Type Designator: NCE3400X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT23

NCE3400X substitution

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NCE3400X datasheet

..1. Size:298K ncepower
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http //www.ncepower.com NCE3400X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30V,... See More ⇒

0.1. Size:278K ncepower
nce3400xy.pdf pdf_icon

NCE3400XY http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features VDS = 30... See More ⇒

7.1. Size:326K ncepower
nce3400.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram ... See More ⇒

7.2. Size:247K ncepower
nce3400ay.pdf pdf_icon

http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30... See More ⇒