NCE3416 Datasheet. Specs and Replacement

Type Designator: NCE3416  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT23

  📄📄 Copy 

NCE3416 substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3416 datasheet

 ..1. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3416

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc... See More ⇒

 8.1. Size:263K  ncepower
 nce3415y.pdf pdf_icon

NCE3416

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 8.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3416

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S... See More ⇒

 8.3. Size:272K  ncepower
 nce3417.pdf pdf_icon

NCE3416

Pb Free Product http //www.ncepower.com NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID... See More ⇒

SHOW MORE

Detailed specifications: NCE3400AY, NCE3400X, NCE3401, NCE3404Y, NCE3406N, NCE3407, NCE3407AY, NCE3415, IRFZ44, NCE3420, NCE4009S, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K

Keywords - NCE3416 MOSFET specs

 NCE3416 cross reference

 NCE3416 equivalent finder

 NCE3416 pdf lookup

 NCE3416 substitution

 NCE3416 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs