NCE40H12 Datasheet. Specs and Replacement

Type Designator: NCE40H12  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

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NCE40H12 datasheet

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NCE40H12

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

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NCE40H12

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NCE40H12

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

 0.3. Size:664K  ncepower
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NCE40H12

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R ... See More ⇒

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Detailed specifications: NCE3420, NCE4009S, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K, IRF3710, NCE40H12I, NCE40H12K, NCE40H20A, NCE40H21, NCE40H29D, NCE40ND0812S, NCE40P05S, NCE40P07S

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