NCE40H12 Datasheet and Replacement
Type Designator: NCE40H12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 970 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
NCE40H12 substitution
NCE40H12 Datasheet (PDF)
nce40h12.pdf

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
nce40h12k.pdf

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
nce40h12i.pdf

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
nce40h12a.pdf

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR
Datasheet: NCE3420 , NCE4009S , NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , IRFB4115 , NCE40H12I , NCE40H12K , NCE40H20A , NCE40H21 , NCE40H29D , NCE40ND0812S , NCE40P05S , NCE40P07S .
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