All MOSFET. NCE40H20A Datasheet

 

NCE40H20A Datasheet and Replacement


   Type Designator: NCE40H20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO220
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NCE40H20A Datasheet (PDF)

 ..1. Size:336K  ncepower
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NCE40H20A

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

 7.1. Size:339K  ncepower
nce40h25ll.pdf pdf_icon

NCE40H20A

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 7.2. Size:398K  ncepower
nce40h29d.pdf pdf_icon

NCE40H20A

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 7.3. Size:361K  ncepower
nce40h21.pdf pdf_icon

NCE40H20A

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

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History: IRFH7188 | HLML6401 | DMT3002LPS | BLF245B | BUK7E3R5-60E | IRFI4410ZG | AP85T03GH-HF

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