NCE4435 Specs and Replacement

Type Designator: NCE4435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

NCE4435 substitution

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NCE4435 datasheet

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 nce4435.pdf pdf_icon

NCE4435

Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE4435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON) ... See More ⇒

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 nce4435x.pdf pdf_icon

NCE4435

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 0.2. Size:709K  ncepower
 nce4435b.pdf pdf_icon

NCE4435

http //www.ncepower.com NCE4435B NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435B uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒

Detailed specifications: NCE40ND0812S, NCE40P05S, NCE40P07S, NCE40P13S, NCE40P15K, NCE40P40K, NCE40P40L, NCE40P70K, 2N7002, NCE4606A, NCE4614, NCE4801, NCE4963, NCE55H12, NCE55P15I, NCE55P15K, NCE55P30

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.