NCE4963 Datasheet. Specs and Replacement
Type Designator: NCE4963 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOP8
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NCE4963 datasheet
nce4963.pdf
Pb Free Product http //www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE4963 uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V =-20... See More ⇒
nce4953.pdf
Pb Free Product http //www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE4953 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VD... See More ⇒
nce4953.pdf
NCE4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View... See More ⇒
Detailed specifications: NCE40P15K, NCE40P40K, NCE40P40L, NCE40P70K, NCE4435, NCE4606A, NCE4614, NCE4801, AO3401, NCE55H12, NCE55P15I, NCE55P15K, NCE55P30, NCE55P30K, NCE6003, NCE6003M, NCE6003Y
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
