NCE4963
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE4963
Marking Code: 4963
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package:
SOP8
NCE4963
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE4963
Datasheet (PDF)
..1. Size:290K ncepower
nce4963.pdf
Pb Free Producthttp://www.ncepower.comNCE4963NCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE4963 uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V =-20
9.1. Size:371K ncepower
nce4953.pdf
Pb Free Producthttp://www.ncepower.com NCE4953NCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VD
9.2. Size:331K ncepower
nce4953a.pdf
Pb Free Producthttp://www.ncepower.com NCE4953ANCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features
9.3. Size:868K cn vbsemi
nce4953.pdf
NCE4953www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View
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