NCE55H12
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE55H12
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 125
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 470
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
TO220
NCE55H12
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE55H12
Datasheet (PDF)
..1. Size:456K ncepower
nce55h12.pdf 
Pb Free Producthttp://www.ncepower.com NCE55H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)
9.1. Size:311K ncepower
nce5520q.pdf
Pb Free Producthttp://www.ncepower.com NCE5520QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =20A Schematic diagram RDS(ON)
9.2. Size:392K ncepower
nce55p04s.pdf
Pb Free Producthttp://www.ncepower.com NCE55P04SNCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE55P04S uses advanced trench technology and G1 G2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON)
9.3. Size:311K ncepower
nce55p15.pdf
Pb Free Producthttp://www.ncepower.com NCE55P15NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
9.4. Size:467K ncepower
nce55p15k.pdf
Pb Free Producthttp://www.ncepower.com NCE55P15KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
9.5. Size:362K ncepower
nce55p15i.pdf
Pb Free Producthttp://www.ncepower.com NCE55P15INCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
9.6. Size:325K ncepower
nce55p30.pdf
Pb Free Producthttp://www.ncepower.com NCE55P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
9.7. Size:357K ncepower
nce55p05s.pdf
http://www.ncepower.com NCE55P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)
9.8. Size:365K ncepower
nce55p30k.pdf
Pb Free Producthttp://www.ncepower.com NCE55P30KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
9.9. Size:926K cn vbsemi
nce55p04s.pdf
NCE55P04Swww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V
9.10. Size:1756K cn vbsemi
nce55p05s.pdf
NCE55P05Swww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAME
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