STU12L01 Datasheet and Replacement
Type Designator: STU12L01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 47 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO252 DPAK
STU12L01 substitution
STU12L01 Datasheet (PDF)
stu12l01.pdf

GreenProductSTU12L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.140 @ VGS=10VTO-252 Package.100V 12A245 @ VGS=4.5VGSSTU SERIES( )TO - 252AA D- PAKC(TA=25 unless otherwise noted)A
stu12n60m2.pdf

STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switchi
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf

STD12N65M5, STF12N65M5, STI12N65M5STP12N65M5, STU12N65M5N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFETDPAK, I2PAK, TO-220FP, TO-220, IPAKFeaturesVDSS @ RDS(on) Type ID PTOT3TJmax max231 21STD12N65M5 8.5 A 70 WIPAK TO-220STF12N65M5 8.5 A(1) 25 W3STI12N65M5 710 V
Datasheet: FDC6420C , STU15L01 , FDC642P , FDC642PF085 , FDC655BN , STU1530PL , FDC658AP , FDC855N , IRF4905 , FDC8601 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 , FDD10AN06A0 .
History: FK10UM-10
Keywords - STU12L01 MOSFET datasheet
STU12L01 cross reference
STU12L01 equivalent finder
STU12L01 lookup
STU12L01 substitution
STU12L01 replacement
History: FK10UM-10



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