All MOSFET. NCE6003Y Datasheet

 

NCE6003Y Datasheet and Replacement


   Type Designator: NCE6003Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT23
 

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NCE6003Y Datasheet (PDF)

 ..1. Size:270K  ncepower
 nce6003y.pdf pdf_icon

NCE6003Y

Pb Free Producthttp://www.ncepower.com NCE6003YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

 7.1. Size:260K  ncepower
 nce6003m.pdf pdf_icon

NCE6003Y

Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram

 7.2. Size:244K  ncepower
 nce6003.pdf pdf_icon

NCE6003Y

Pb Free Producthttp://www.ncepower.com NCE6003NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

 7.3. Size:671K  ncepower
 nce6003xm.pdf pdf_icon

NCE6003Y

http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR

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Datasheet: NCE4963 , NCE55H12 , NCE55P15I , NCE55P15K , NCE55P30 , NCE55P30K , NCE6003 , NCE6003M , RFP50N06 , NCE6005AR , NCE6008AS , NCE6009AS , NCE6012AS , NCE6020AI , NCE6020AK , NCE6045G , NCE6050A .

History: HRLD80N06K | 2SK1565 | UTT3205 | IPP80N04S2-04 | VB1106K | CEA6426 | STP20NF06L

Keywords - NCE6003Y MOSFET datasheet

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