NCE60P06S Specs and Replacement

Type Designator: NCE60P06S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

NCE60P06S substitution

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NCE60P06S datasheet

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NCE60P06S

http //www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON) ... See More ⇒

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NCE60P06S

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nce60p05n.pdf pdf_icon

NCE60P06S

http //www.ncepower.com NCE60P05N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON) ... See More ⇒

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nce60p09s.pdf pdf_icon

NCE60P06S

NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒

Detailed specifications: NCE6080A, NCE6080D, NCE6080K, NCE609, NCE60H15A, NCE60H15AD, NCE60P04R, NCE60P04Y, RFP50N06, NCE60P09S, NCE60P10K, NCE60P12K, NCE60P14AK, NCE60P16AK, NCE60P18AK, NCE60P20K, NCE60P45K

Keywords - NCE60P06S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs