NCE60P16AK Specs and Replacement

Type Designator: NCE60P16AK

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 73.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO252

NCE60P16AK substitution

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NCE60P16AK datasheet

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NCE60P16AK

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NCE60P16AK

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R ... See More ⇒

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NCE60P16AK

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NCE60P16AK

NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R ... See More ⇒

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Detailed specifications: NCE60H15AD, NCE60P04R, NCE60P04Y, NCE60P06S, NCE60P09S, NCE60P10K, NCE60P12K, NCE60P14AK, IRF520, NCE60P18AK, NCE60P20K, NCE60P45K, NCE60P50, NCE60P50K, NCE60P55K, NCE65T180D, NCE65T180

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