All MOSFET. NCE65T180D Datasheet

 

NCE65T180D Datasheet and Replacement


   Type Designator: NCE65T180D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO263
 

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NCE65T180D Datasheet (PDF)

 ..1. Size:622K  ncepower
 nce65t180d nce65t180 nce65t180f.pdf pdf_icon

NCE65T180D

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 ..2. Size:1722K  ncepower
 nce65t180f nce65t180 nce65t180d.pdf pdf_icon

NCE65T180D

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

 ..3. Size:1722K  ncepower
 nce65t180d.pdf pdf_icon

NCE65T180D

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

 5.1. Size:1722K  ncepower
 nce65t180f.pdf pdf_icon

NCE65T180D

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

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Datasheet: NCE60P14AK , NCE60P16AK , NCE60P18AK , NCE60P20K , NCE60P45K , NCE60P50 , NCE60P50K , NCE60P55K , IRF520 , NCE65T180 , NCE65T180F , NCE65T180T , NCE65T1K2 , NCE65T1K2D , NCE65T1K2F , NCE65T1K2K , NCE65T1K2I .

History: PMPB20EN | ELM14430AA | IXTH6N150 | RJK0629DPE | HF16N10 | IXTM2N100 | L2SK801LT1G

Keywords - NCE65T180D MOSFET datasheet

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