All MOSFET. NCE65T180F Datasheet

 

NCE65T180F Datasheet and Replacement


   Type Designator: NCE65T180F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

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NCE65T180F Datasheet (PDF)

 ..1. Size:622K  ncepower
 nce65t180d nce65t180 nce65t180f.pdf pdf_icon

NCE65T180F

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 ..2. Size:1722K  ncepower
 nce65t180f nce65t180 nce65t180d.pdf pdf_icon

NCE65T180F

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

 ..3. Size:1722K  ncepower
 nce65t180f.pdf pdf_icon

NCE65T180F

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

 5.1. Size:494K  ncepower
 nce65t180v.pdf pdf_icon

NCE65T180F

NCE65T180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 199 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

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Datasheet: NCE60P18AK , NCE60P20K , NCE60P45K , NCE60P50 , NCE60P50K , NCE60P55K , NCE65T180D , NCE65T180 , IRF730 , NCE65T180T , NCE65T1K2 , NCE65T1K2D , NCE65T1K2F , NCE65T1K2K , NCE65T1K2I , NCE65T260D , NCE65T260 .

History: VBM1808 | RU1HC2H | LNND04R120 | NCEP6016AS | CSD17313Q2 | YJD45P03A | 6N60KG-TA3-T

Keywords - NCE65T180F MOSFET datasheet

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