All MOSFET. NCE65T1K2 Datasheet

 

NCE65T1K2 Datasheet and Replacement


   Type Designator: NCE65T1K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220
 

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NCE65T1K2 Datasheet (PDF)

 ..1. Size:599K  ncepower
 nce65t1k2 nce65t1k2d nce65t1k2f.pdf pdf_icon

NCE65T1K2

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 0.1. Size:476K  ncepower
 nce65t1k2i.pdf pdf_icon

NCE65T1K2

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 0.2. Size:476K  ncepower
 nce65t1k2k.pdf pdf_icon

NCE65T1K2

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 0.3. Size:476K  ncepower
 nce65t1k2k nce65t1k2i.pdf pdf_icon

NCE65T1K2

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

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Datasheet: NCE60P45K , NCE60P50 , NCE60P50K , NCE60P55K , NCE65T180D , NCE65T180 , NCE65T180F , NCE65T180T , NCEP15T14 , NCE65T1K2D , NCE65T1K2F , NCE65T1K2K , NCE65T1K2I , NCE65T260D , NCE65T260 , NCE65T260F , NCE65T260I .

History: HMS80N10AL | STP11NM80 | AFP8833 | SRADM1005 | FQB19N10LTM | UF3205L-T3P-T | 2SK3278

Keywords - NCE65T1K2 MOSFET datasheet

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